©based Ultra-Fast Design Exploration: Graphene-Nanoelectronic Circuit Case Studies

SPICE has been the corner stone of integrated circuit simulation since the 1970s. The device-level options that are available for SPICE/analog simulators to simulate a circuit netlist are typically compact models and/or Verilog-A structural and behavioral models. Though these simulations are very accurate, for large and complex circuits/systems they are extremely slow and even computationally infeasible. Thus, as a paradigm shift of the conventional design simulation ow, this paper presents a complete Simscape R ©based design and simulation ow for ultra-fast design exploration of graphene based nanoelectronic systems. A behavioral model for a dual gate Graphene Field E ect Transistor (GFET) is modeled in Simscape R ©based on the drift-di usion conduction mechanism. The kink region of the I−V characteristic is modeled via a displacement current. For case study design circuits, an all graphene based low noise ampli er (LNA) and an LC-tank Voltage Controlled Oscillator (VCO) are presented. The results show that the proposed design alternative to simulate analog circuits and systems is a viable option in addition to the existing SPICE, VHDL-AMS or Verilog-A based ows and can open the way to true device-level system design exploration and optimization. To the best of the authors' knowledge, this is the rst ever paper to explore a Simscape R ©model of a GFET device and design a GFET based radio-frequency (RF) circuit using Simscape R © . Computer Science and Engineering, University of North Texas, Denton, TX 76203. Tel.: +1 940-565-3276 Fax: +1 940-565-2799 E-mail: [email protected] Computer Science and Engineering, University of North Texas, Denton, TX 76203. Tel.: +1 940-565-3276 Fax: +1 940-565-2799 E-mail: [email protected] Engineering Technology, University of North Texas, Denton, TX 76203. Tel.: +1 940-891-6708 Fax: +1 940-565-2666 E-mail: [email protected] 2 Shital Joshi et al.